Sputtering System

● Process Chamber Method : Depo-down(planar type)
● Base pressure : 1 * 10^(-7)
● Cathode 3 inch internal type : 3 sets.
● Substrate holder : Max. size is 2 inch 3ea(Rotation:30rpm) 3 step position control
● Thickness uniformity : Guaranteed in 3'' dia
● Substrate heater : Max. temp 850°C(Resistive heater)
● Pumping system APC function : conductance adjustment valve
● RF bias and sputter etch for pre-cleaning are option
● Operation system : Semi auto control interface(PLC/PC base control)

Pulsed Laser Deposotion System

● Maximum substrate size : Can handle one 2-inch diameter substrate, or multiple small substrates per    customer requirement
● Maximum substrate temperature : 950°C(in oxygen) for non-transparent substrates such as Silicon, and 850°C    for transparent substrates(such as LaAlO3)
● Temperature uniformity : ± 3°C across 2-inch diameter Si substrate ● Operation Pressure Range : 5 X 10^(-7)Torr base to 300mTorr
● Target Carrousel : 4channel multi target holder
● Film Thickness Uniformity : ± 4% over 90% of a 30mm diameter substrate(5-inch throw) for a 500mm thick    film using raster scan over a 1-inch diameter target
● Traget to Substrate(Throw) Distance : Variable from 2-inch to 4inch
● Nominal Angle of incidence of the laser beam on target : 45°
● Base Pressure of the Main Chamber : 5 X 10^(-8)Torr guaranteed, with system at room temperature without    tergets in the chamber
● Operational Wavelengh : 248nm(KrF) or 193nm(ArF), others available on request

E-Beam Evaporation System

Film Deposition
● Process : Multi-layer films deposition
● Deposition material : Al, Ti, Ta, Ni, Au, Pt
● Substrate size : 4''~12'' diameter
● Purpose : Research and development

Thermal Evaporation System

Feature
● Process : Thin films deposition
● Deposition matrial : Meterials(Al, Zn, Cu, Au)
● Deposition thickness : Customer specified
● Purpose : Research and development